pnp 2n2907 ? 2n2907a npn 2N2222 ? 2N2222a comset semiconductors 1/3 the 2n2907 and 2n2907aa are pnp transistors mount ed in to-18 metal package with the collector connected to the case . they are primarily intended for high speed switching. npn complements are 2N2222 and 2N2222a . compliance to rohs absolute maximum ratings symbol ratings value unit 2n2907a -60 v ceo collector-emitter voltage 2n2907 -40 v 2n2907a -60 v cbo collector-base voltage 2n2907 -60 v 2n2907a -5 v ebo emitter-base voltage 2n2907 -5 v 2n2907a i c collector current 2n2907 -600 ma 2n2907a p d total power dissipation @ t amb = 25 2n2907 0.4 watts 2n2907a p d total power dissipation @ t case = 25 2n2907 1.8 watts 2n2907a t j junction temperature 2n2907 200 c 2n2907a t stg storage temperature range 2n2907 -65 to +200 c (1) applicable up to i c = 500ma thermal characteristics symbol ratings value unit 2n2907a r thj-a thermal resistance, junction to ambient in free air 2n2907 350 k/w 2n2907a r thj-c thermal resistance, junction to case 2n2907 146 k/w s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s
pnp 2n2907 ? 2n2907a npn 2N2222 ? 2N2222a comset semiconductors 3 /3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v cb =-50 v, i e =0v 2n2907a - - -10 i cbo collector cutoff current v cb =-50 v, i e =0v 2n2907 - - -20 na v cb =-50 v, i e =0v, t j =150c 2n2907a - - -10 i cbo collector cutoff current v cb =-50 v, i e =0v, t j =150c 2n2907 - - -20 a 2n2907a i cex collector cutoff current v ce =-30 v, v be =0.5v 2n2907 - - -50 na 2n2907a -60 - - v ceo collector emitter breakdown voltage i c =-10 ma, i b =0 2n2907 -40 - - v 2n2907a -60 - - v cbo collector base breakdown voltage i c =-10 a, i e =0 2n2907 -60 - - v 2n2907a -5 - - v ebo emitter base breakdown voltage i e =-10 a, i c =0 2n2907 -5 - - v 2n2907a i c =-0.1 ma, v ce =-10 v 2n2907 75 - - 2n2907a i c =-1 ma, v ce =-10 v 2n2907 100 - - 2n2907a i c =-10 ma, v ce =-10 v 2n2907 100 - - 2n2907a i c =-150 ma, v ce =-10 v 2n2907 100 - 300 2n2907a 50 - - h fe dc current gain i c =-500 ma, v ce =-10 v (1) 2n2907 30 - - - 2n2907a - - -0.4 i c =-150 ma, i b =-15 ma 2n2907 - - -0.4 2n2907a - - -1.6 v ce(sat) collector-emitter saturation voltage (1) i c =-500 ma, i b =-50 ma 2n2907 - - -1.6 2n2907a - - -1.3 i c =-150 ma, i b =-15 ma 2n2907 - - -1.3 2n2907a - - -2.6 v be(sat) base-emitter saturation voltage (1) i c =-500 ma, i b =-50 ma 2n2907 - - -2.6 v symbol ratings test condition(s) min typ mx unit 2n2907a 200 - - f t transition frequency i c =-50 ma, v ce =-20 v f= 100mhz 2n2907 200 - - mhz symbol ratings test condition(s) min typ mx unit t d delay time 2n2907a - - 10 t r rise time i c =-150 ma ,i b =-15 ma -v cc =-30 v 2n2907 - - 40 ns 2n2907a c c collector capacitance i e = i e = 0 ,v cb =-10 v f = 100khz 2n2907 - - 8 pf 2n2907a c e emitter capacitance i c = i c = 0 ,v eb =-0.5 v f = 100khz 2n2907 - - 30 pf
pnp 2n2907 ? 2n2907a npn 2N2222 ? 2N2222a comset semiconductors 3 /3 (1) pulse conditions : tp < 300 s, =2% mechanical data case to-18 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions mm inches a 12,7 0,5 b 0,49 0,019 d 5,3 0,208 e 4,9 0,193 f 5,8 0,228 g 2,54 0,1 h 1,2 0,047 i 1,16 0,045 l 45 45 pin 1 : emitter pin 2 : base pin 3 : collector
|
